Renesas Electronics - HFA3135IH96

  1. Home
  2. Renesas Electronics - HFA3135IH96
HFA3135IH96 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HFA3135IH96
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .026 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
Datasheet HFA3135IH96 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .026 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 15
Minimum Operating Temperature: -40 Cel
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 4 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 85 Cel
Maximum Collector-Base Capacitance: .4 pF
Maximum VCEsat: .25 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

934055908115 by NXP Semiconductors

934055908115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
SMA540BTR by STMicroelectronics

SMA540BTR

STMicroelectronics

SMA540BTR by STMicroelectronics is an NPN RF small signal BJT in a rectangular surface mount package. It features a max power dissipation of 0.12 W, a collector current of 0.04 A, and is ideal for low-power amplification applications. Its gull-wing terminals ensure easy PCB integration.
LM3046M/NOPB by Texas Instruments

LM3046M/NOPB

Texas Instruments

LM3046M/NOPB by Texas Instruments is an NPN BJT transistor with 5 elements and 14 terminals. It operates in the very high-frequency band up to 550MHz, making it suitable for amplifier applications. With a max collector-emitter voltage of 15V and operating temperature of 85°C, it offers reliable performance in various electronic circuits.
BFR520T,115 by NXP Semiconductors

BFR520T,115

NXP Semiconductors

BFR520T,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier transistor that operates in the L Band frequency range up to 9000 MHz. With a max power dissipation of 0.3 W and a max operating temperature of 150°C, it is suitable for various applications requiring high-frequency amplification.
CA3083M96 by Renesas Electronics

CA3083M96

Renesas Electronics

CA3083M96 by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450MHz, with a max collector-emitter voltage of 15V and current of 0.1A. This small outline package has 16 terminals, Gull Wing form, and is surface mountable.
MMBTH81 by Onsemi

MMBTH81

Onsemi

The Onsemi MMBTH81 is a PNP RF BJT with 3 terminals, operating in the VHF band. It has a max power dissipation of 0.35W and transition frequency of 600MHz. Ideal for amplifier applications due to its high collector-emitter voltage and small outline package style.
BFR92AW by NXP Semiconductors

BFR92AW

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
2N3643 by Swampscott Electronics

2N3643

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
LA733P by Onsemi

LA733P

Onsemi

LA733P by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.35W, hFE of 200, and operates at up to 150 °C. The package is cylindrical with through-hole terminals and collector-emitter voltage of 48V.
BFP650FH6327XTSA1 by Infineon Technologies

BFP650FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
934067707215 by NXP Semiconductors

934067707215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
2N3866 by International Diode

2N3866

International Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
TIS64A by Texas Instruments

TIS64A

Texas Instruments

TIS64A by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.5W, operating temperature up to 150°C, and a transition frequency of 500MHz. The package style is cylindrical with a plastic/epoxy body material and wire terminals.
SS9018F by Onsemi

SS9018F

Onsemi

SS9018F by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 54, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.
BFR99A by STMicroelectronics

BFR99A

STMicroelectronics

BFR99A by STMicroelectronics is a PNP RF small signal BJT designed for amplifier applications. It features a max power dissipation of 0.36 W, operates at frequencies up to 2300 MHz, and withstands temperatures up to 200 °C. Its cylindrical metal package ensures durability in ultra-high frequency environments.
MPSH17RL1 by Onsemi

MPSH17RL1

Onsemi

MPSH17RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is used in amplifier applications due to its very high frequency band capability. The package style is cylindrical with a plastic/epoxy body material and through-hole terminals.
KSC1674Y by Onsemi

KSC1674Y

Onsemi

KSC1674Y by Onsemi is an NPN BJT transistor with max VCEsat of 0.3V, hFE of 120, and fT of 600MHz. Ideal for amplifier applications in the ultra-high frequency band due to its low power dissipation and high transition frequency. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
934066851115 by NXP Semiconductors

934066851115

NXP Semiconductors

RF Small Signal Bipolar Transistors;
CPH6074 by Onsemi

CPH6074

Onsemi

CPH6074 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It operates in the very high frequency band up to 1200 MHz, with a max collector-emitter voltage of 15V and power dissipation of 0.5W. The package is a small outline with Gull Wing terminals, making it ideal for surface mount applications.
2N3866 by Asi Semiconductor

2N3866

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;