Renesas Electronics - HL6326G

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HL6326G by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HL6326G
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP; Nominal Output Power: 5 W; Peak Wavelength (nm): 635;
Datasheet HL6326G Datasheet
NAME DESCRIPTION
Shape: ROUND
Configuration: SINGLE WITH BUILT-IN PHOTO DIODE
Size: 2 mm
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2.4 V
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Nominal Output Power: 5 W
Maximum Forward Current: .06 A
Peak Wavelength (nm): 635
Maximum Threshold Current: 50 mA
Maximum Operating Temperature: 60 Cel
Semiconductor Material: AlGaInP
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