Renesas Electronics - HL7836MG

  1. Home
  2. Renesas Electronics - HL7836MG
HL7836MG by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HL7836MG
Description LASER DIODE; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 785; Shape: ROUND; Nominal Output Power: 5 W;
Datasheet HL7836MG Datasheet
NAME DESCRIPTION
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Shape: ROUND
Configuration: SINGLE WITH BUILT-IN PHOTO DIODE
Nominal Output Power: 5 W
Peak Wavelength (nm): 785
Maximum Threshold Current: 70 mA
Maximum Operating Temperature: 60 Cel
Minimum Operating Temperature: -10 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NX8570SC878-BA-AZ by Renesas Electronics

NX8570SC878-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
DL-3147-185 by Onsemi

DL-3147-185

Onsemi

DL-3147-185 by Onsemi is a Laser Diode with 0.05A max forward current, emitting at 650nm peak wavelength. Ideal for applications requiring laser diodes, it operates b/w -10 °C to 80°C and has a max forward voltage of 2.6V.
NX8571SC6070-BA-AZ by Renesas Electronics

NX8571SC6070-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
NX8571SC322-BA by Renesas Electronics

NX8571SC322-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1532; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel;
NX8563LF469-BA-A by Renesas Electronics

NX8563LF469-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1546;
NX8571SC976-BA-AZ by Renesas Electronics

NX8571SC976-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1598; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
NX8570SC795-BA by Renesas Electronics

NX8570SC795-BA

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1580; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel;
SDL3144-111 by Onsemi

SDL3144-111

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 60 Cel;
TOLD322ACB by Toshiba

TOLD322ACB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
TOLD350 by Toshiba

TOLD350

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1550; Maximum Forward Voltage: 15 V; Minimum Operating Temperature: -15 Cel; Semiconductor Material: InGaAs;
SDL5032 by Onsemi

SDL5032

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; JESD-609 Code: e0; Peak Wavelength (nm): 830;
TOLD300S by Toshiba

TOLD300S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 15 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V;
NX8570SC883D-BA-A by Renesas Electronics

NX8570SC883D-BA-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1588; Semiconductor Material: InGaAsP;
SPL2Y85 by Infineon Technologies

SPL2Y85

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 850; Maximum Threshold Current: 800 mA;
NX8570SC778-BA by Renesas Electronics

NX8570SC778-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1578; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
NX8563LA397-CD-A by Renesas Electronics

NX8563LA397-CD-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1540; Maximum Forward Current: .3 A; Maximum Response Time: .00000000012 s;
NX8570SC737-BA by Renesas Electronics

NX8570SC737-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1574; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
DL-7140-201P by Onsemi

DL-7140-201P

Onsemi

DL-7140-201P by Onsemi is a LASER DIODE with Peak Wavelength of 783nm, Max Forward Current of 0.14A, and Operating Temperature range from -10 °C to 60°C. It is ideal for applications requiring precise laser emission in through-hole mounting configurations.
TOLD321BBA by Toshiba

TOLD321BBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310;
F4048 by Toshiba

F4048

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 810; Maximum Forward Current: .13 A;