Renesas Electronics - HMM-11820S

  1. Home
  2. Renesas Electronics - HMM-11820S
HMM-11820S by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HMM-11820S
Description RF/Microwave Amplifiers; Technology: GAAS; Screening Level: MIL-STD-883 Class S (Modified); Maximum Supply Current: 80 mA; Maximum Operating Temperature: 180 Cel; Power Supplies (V): 10.5;
Datasheet HMM-11820S Datasheet
NAME DESCRIPTION
Package Equivalence Code: DIE OR CHIP
Screening Level: MIL-STD-883 Class S (Modified)
Technology: GAAS
Maximum Operating Temperature: 180 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 80 mA
Power Supplies (V): 10.5
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SGL-0363Z by Sirenza Microdevices

SGL-0363Z

Sirenza Microdevices

Sirenza Microdevices' SGL-0363Z is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, handling up to 18 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.
SBF-4089Z by Qorvo

SBF-4089Z

Qorvo

Qorvo's SBF-4089Z is a GAAS RF amplifier with 13.2 dB gain, operating from 0 to 500 MHz. It has a max input power of 19 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with matte tin terminals.
MGA-61563-TR2G by Agilent Technologies

MGA-61563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 48 mA;
SBB2089ZSR by Rf Micro Devices

SBB2089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
HMC462LP5E by Hittite Microwave

HMC462LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
MGA-86576-TR1 by Agilent Technologies

MGA-86576-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Maximum Operating Frequency: 8000 MHz;
TQP3M9035 by Qorvo

TQP3M9035

Qorvo

The Qorvo TQP3M9035 is a wide band medium power RF amplifier with 15 dB gain, suitable for frequencies ranging from 50 MHz to 6 GHz. It can handle up to 23 dBm of CW input power and operates in temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high performance amplification.
HMC608LC4 by Hittite Microwave

HMC608LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Gain: 27 dB; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 9500 MHz;
RA20H8994M-101 by Mitsubishi Electric

RA20H8994M-101

Mitsubishi Electric

Mitsubishi Electric's RA20H8994M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 896-941 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and characteristic impedance of 50 ohms.
MGA-62563-TR1 by Broadcom

MGA-62563-TR1

Broadcom

Broadcom's MGA-62563-TR1 is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and requires 3/5V power supplies, drawing a max current of 77mA.
MGA-81563-TR2G by Agilent Technologies

MGA-81563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;
TGA4521 by Qorvo

TGA4521

Qorvo

Qorvo's TGA4521 is a GaAs RF amplifier with 16dB gain, operating from 32-45 GHz. It handles up to 20 dBm CW input power and requires a 6V supply. Ideal for wideband medium-power applications in RF and microwave systems.
BGB741L7ESD-E6327 by Infineon Technologies

BGB741L7ESD-E6327

Infineon Technologies

BGB741L7ESD-E6327 by Infineon Technologies is a RF & Microwave Amplifier with 3V power supply, 7 terminals, and gold finish. It operates on bipolar technology with a max current of 7.2mA. Ideal for surface mount applications in various electronic devices.
HMC799LP3E by Hittite Microwave

HMC799LP3E

Hittite Microwave

WIDE BAND LOW POWER; Minimum Operating Frequency: 0 MHz; Additional Features: LOW NOISE; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 700 MHz; Gain: 42 dB;
SST13LP05-MLCF by Silicon Storage Technology

SST13LP05-MLCF

Silicon Storage Technology

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; No. of Functions: 2;
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
RA35H1516M-101 by Mitsubishi Electric

RA35H1516M-101

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 154-162 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and supports power supplies of 5V and 12.5V.
HMC903LP3E by Hittite Microwave

HMC903LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;
RA07N4047M-101 by Mitsubishi Electric

RA07N4047M-101

Mitsubishi Electric

RA07N4047M-101 by Mitsubishi Electric is a RF amplifier module with max input power of 14.77 dBm and VSWR of 4. It operates in the frequency range of 400-470 MHz, ideal for narrowband high-power applications. With a temperature range from -30 to 90°C, it is suitable for various RF and microwave systems.
GALI-39+ by Mini-circuits

GALI-39+

Mini-circuits

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.