Renesas Electronics - HQ1F3P-T1-AY

  1. Home
  2. Renesas Electronics - HQ1F3P-T1-AY
HQ1F3P-T1-AY by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HQ1F3P-T1-AY
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
Datasheet HQ1F3P-T1-AY Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 2 A
Maximum Power Dissipation (Abs): 2 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP50 by Semitronics

TIP50

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
JANTXV2N3055 by M/a-com Technology Solutions

JANTXV2N3055

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Reference Standard: MIL-19500; Terminal Position: BOTTOM;
MJD122G by Onsemi

MJD122G

Onsemi

MJD122G by Onsemi is a NPN Power BJT with 100V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a small outline package. Suitable for surface mount assembly with a max operating temperature of 150°C.
BD140-16 by SPC TECHNOLOGY/ MULTICOMP

BD140-16

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 100; Terminal Form: THROUGH-HOLE;
TIP127 by Weitron Technology

TIP127

Weitron Technology

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
2N3055H by Tt Electronics Plc

2N3055H

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG;
TIP47 by Texas Instruments

TIP47

Texas Instruments

TIP47 by Texas Instruments is a NPN Power BJT with 40W power dissipation, 250V max collector-emitter voltage, and 1A max collector current. Ideal for applications requiring high-power amplification in electronic circuits. Features single configuration, through-hole terminals, and silicon transistor element material.
BDX53C by Samsung

BDX53C

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP41C by Baneasa S A

TIP41C

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Terminal Form: THROUGH-HOLE; Package Style (Meter): FLANGE MOUNT;
BCP56-16 by Secos

BCP56-16

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;
BCX5616TA by Diodes Incorporated

BCX5616TA

Diodes Incorporated

BCX5616TA by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it has a collector-emitter voltage of 80V and transition frequency of 150MHz.
TIP42A by Onsemi

TIP42A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BDX53C by Crimson Semiconductor

BDX53C

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 8 A; Package Style (Meter): FLANGE MOUNT;
TIP110 by Rectron

TIP110

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
TIP32C by Onsemi

TIP32C

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
MJE3055T by New Jersey Semiconductor Products

MJE3055T

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP31C by Taitron Components

TIP31C

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 100 V;
TIP142T by New Jersey Semiconductor Products

TIP142T

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V; No. of Elements: 1; Transistor Element Material: SILICON;
TIP122 by Asi Semiconductor

TIP122

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): 8 A; JEDEC-95 Code: TO-220AB;
BCP53-16T3G by Onsemi

BCP53-16T3G

Onsemi

BCP53-16T3G by Onsemi is a PNP power BJT with 80V VCEO, 1.5A IC, and 100 hFE. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 50MHz. This small outline transistor has Gull Wing terminals in a rectangular package.