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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | HSG2003TR |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 32500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; |
| Datasheet | HSG2003TR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 32500 MHz |
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON GERMANIUM |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 7 |
| Maximum Power Dissipation (Abs): | .5 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-XBCC-N7 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Highest Frequency Band: | C BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | EMITTER |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 170 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 5 V |
| Maximum Collector-Base Capacitance: | .5 pF |
| Peak Reflow Temperature (C): | 240 |
