Renesas Electronics - HSG2003TR

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HSG2003TR by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HSG2003TR
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 32500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
Datasheet HSG2003TR Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 32500 MHz
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 7
Maximum Power Dissipation (Abs): .5 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Highest Frequency Band: C BAND
Maximum Operating Temperature: 150 Cel
Case Connection: EMITTER
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 170
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 5 V
Maximum Collector-Base Capacitance: .5 pF
Peak Reflow Temperature (C): 240
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