Renesas Electronics - HTT1127E

  1. Home
  2. Renesas Electronics - HTT1127E
HTT1127E by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HTT1127E
Description NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Minimum DC Current Gain (hFE): 90;
Datasheet HTT1127E Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 2000 MHz
Maximum Collector Current (IC): .05 A
Maximum Power Dissipation (Abs): .2 W
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 90
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BD139 by Texas Instruments

BD139

Texas Instruments

BD139 by Texas Instruments is an NPN transistor with a max power dissipation of 8W and max collector current of 1.5A. With a min DC current gain of 40, it operates up to 150°C making it suitable for high-power applications like amplifiers and power supplies.
TIP42C by North American Philips Discrete Products Div

TIP42C

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD140 by Inchange Semiconductor

BD140

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MMBT4401 by Boca Semiconductor

MMBT4401

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BD138 by Shanghai Lunsure Electronic Technology

BD138

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N4401 by Unisonic Technologies

2N4401

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
TIP32C by Unisonic Technologies

TIP32C

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BD243C by Thomson Consumer Electronics

BD243C

Thomson Consumer Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;
JAN2N3055 by Solid Power

JAN2N3055

Solid Power

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC857C by Itt Components

BC857C

Itt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
3003 by Asi Semiconductor

3003

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
TIP31C by General Electric Solid State

TIP31C

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP47 by North American Philips Discrete Products Div

TIP47

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
MJE3055T by Unisonic Technologies

MJE3055T

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
BSS84 by Philips Semiconductors

BSS84

Philips Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (Abs) (ID): .13 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BCY89 by Texas Instruments

BCY89

Texas Instruments

BCY89 by Texas Instruments is an NPN transistor with a max power dissipation of 0.15W and min DC current gain of 100. It operates at a max temperature of 175°C, with a max collector current of 0.03A and nominal transition frequency of 10MHz. This transistor is commonly used in applications requiring low power dissipation and high DC current gain, such as signal amplification in electronic circuits.
TIP117 by National Semiconductor

TIP117

National Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
173 by Semiconductors

173

Semiconductors

Other Transistors;
MJE3055T by Iskra Semic Capacitors Industry

MJE3055T

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP42C by Toshiba

TIP42C

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;