HTT1129E by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	HTT1129E
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .08 A;
Datasheet	HTT1129E Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	4000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.08 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	90
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.2 W
Maximum Collector-Emitter Voltage:	6 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	.65 pF

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