Renesas Electronics - HTT1132E

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HTT1132E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HTT1132E
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
Datasheet HTT1132E Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 12000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 90
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .2 W
Maximum Collector-Emitter Voltage: 6 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: .35 pF
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