Renesas Electronics - HVD355BKRF-E

  1. Home
  2. Renesas Electronics - HVD355BKRF-E
HVD355BKRF-E by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HVD355BKRF-E
Description VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 6.8 pF; Maximum Repetitive Peak Reverse Voltage: 15 V;
Datasheet HVD355BKRF-E Datasheet
NAME DESCRIPTION
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 15 V
Sub-Category: Varactors
Surface Mount: YES
Nominal Diode Capacitance: 6.8 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SVC354R by Onsemi

SVC354R

Onsemi

The Onsemi SVC354R is a varactor diode with a min quality factor of 200, breakdown voltage of 16V, and capacitance ratio of 17.5. It is used in applications requiring variable capacitance diodes for RF tuning circuits due to its small outline package and gull wing terminals.
934040030115 by NXP Semiconductors

934040030115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB911/A133 by NXP Semiconductors

BB911/A133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BBY39TRL13 by NXP Semiconductors

BBY39TRL13

NXP Semiconductors

BBY39TRL13 by NXP Semiconductors is a surface-mount varactor diode featuring a dual terminal design and a min capacitance ratio of 8. Its compact rectangular package makes it ideal for RF tuning applications. This silicon-based component ensures reliable performance in various electronic circuits.
BB417133 by NXP Semiconductors

BB417133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BBY42TRL by NXP Semiconductors

BBY42TRL

NXP Semiconductors

BBY42TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and voltage-controlled oscillators, it offers reliable performance in compact designs.
MMBV105GLT1G by Onsemi

MMBV105GLT1G

Onsemi

MMBV105GLT1G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 250, ideal for ultra high frequency applications. It has a nominal capacitance of 2.15 pF and operates b/w -55°C to 150°C, making it suitable for small outline packages in RF circuits.
MV2108 by Onsemi

MV2108

Onsemi

MV2108 by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and max operating temperature of 150 °C. It is used in RF applications for frequency tuning due to its variable capacitance property.
BB149A by NXP Semiconductors

BB149A

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC211SP by Onsemi

SVC211SP

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 42 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Minimum Quality Factor: 100;
SVC211 by Onsemi

SVC211

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 100; Nominal Diode Capacitance: 42 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;
934057929135 by NXP Semiconductors

934057929135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE;
BB804Y212 by NXP Semiconductors

BB804Y212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB405B by NXP Semiconductors

BB405B

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
TIV25 by Texas Instruments

TIV25

Texas Instruments

TIV25 by Texas Instruments is a single varactor diode with 28pF capacitance, 30V breakdown voltage, and 80 min quality factor. Ideal for very high frequency applications due to its isolated case connection, 0.25W power dissipation, and silicon diode element material.
BBY40TRL13 by NXP Semiconductors

BBY40TRL13

NXP Semiconductors

BBY40TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning circuits, it offers reliable performance in compact designs.
BB804TRL by NXP Semiconductors

BB804TRL

NXP Semiconductors

BB804TRL by NXP Semiconductors is a surface-mount varactor diode featuring a dual terminal configuration and a min capacitance ratio of 1.65. Its compact rectangular package makes it ideal for RF tuning applications. This silicon-based component enhances circuit performance in communication devices.
1SV228 by Toshiba

1SV228

Toshiba

The Toshiba 1SV228 is a Varactor Diode with common cathode configuration, suitable for surface mount applications. It features a max reverse voltage of 15V, diode capacitance ratio of 2.1, and operates up to 125°C. Ideal for electronic circuits requiring variable capacitance and high breakdown voltage.
BB152 by NXP Semiconductors

BB152

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LV2205RLRA by Onsemi

LV2205RLRA

Onsemi

LV2205RLRA by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and a breakdown voltage of 25 V. It is ideal for applications requiring variable capacitance in electronic circuits due to its high-quality performance and temperature range up to 150 °C.