Renesas Electronics - HVU383BTRF-E

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 55 pF;

SVC364M by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 200 min quality factor. It has a min breakdown voltage of 16V and diode capacitance ratio of 17.5. Ideal for RF applications requiring variable capacitance diodes in small outline packages.

MV2109G by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB182,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 20.6 and breakdown voltage of 32V. It operates in the very high frequency band, suitable for applications requiring variable capacitance like tuning circuits. This single-configured diode comes in a small outline package with dual terminals and can withstand temperatures from -55 to 125°C.

1N5468 by Onsemi is a varactor diode with 22pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 500 and low reverse current of 0.00000002uA.

MV2109 by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode has a breakdown voltage of 30 V and is classified as an abrupt variable capacitance diode with through-hole terminal form.

MMBV2109LT1G by Onsemi is a varactor diode with a min quality factor of 200, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and a max power dissipation of 0.225 W, making it ideal for RF tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MV2105RLRA by Onsemi is a varactor diode with a min quality factor of 400, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 15 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

1N4787 by Onsemi is a varactor diode with a min quality factor of 15 and max reverse current of 0.005 uA. It has a nominal capacitance of 8.2 pF, making it ideal for applications requiring variable capacitance diodes in circuits with voltage up to 25 V. With an operating temperature range from -65 to 150 °C, this diode is suitable for various electronic devices and RF applications.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: 18.22 pF; Terminal Finish: TIN; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 25;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 26.75 pF; Maximum Repetitive Peak Reverse Voltage: 20 V; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 16 V; Minimum Quality Factor: 190; Nominal Diode Capacitance: 37 pF;

BBY31TRL by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a compact rectangular package with 3 terminals and surface mount capability. Ideal for tuning circuits, it enhances performance in RF devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;