Renesas Electronics - HVU537

  1. Home
  2. Renesas Electronics - HVU537
HVU537 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HVU537
Description VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V;
Datasheet HVU537 Datasheet
NAME DESCRIPTION
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 10 V
Sub-Category: Varactors
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BB171 by NXP Semiconductors

BB171

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV2201 by Knox Semiconductors

MV2201

Knox Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB201,215 by NXP Semiconductors

BB201,215

NXP Semiconductors

NXP Semiconductors' BB201,215 is a varactor diode with 95pF capacitance and 15V peak reverse voltage. Commonly used in RF applications due to its variable capacitance feature, it operates b/w -55°C to 125°C. This small outline diode has a gull wing terminal form and is surface mountable for easy integration.
BB131,135 by NXP Semiconductors

BB131,135

NXP Semiconductors

NXP Semiconductors' BB131,135 Varactor Diodes are surface mountable with a nominal capacitance of 12pF. These diodes have a max reverse voltage of 30V and can withstand peak reflow temp of 260°C for up to 30s. Ideal for applications requiring variable capacitance like RF tuning circuits.
MDX597N by Texas Instruments

MDX597N

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;
BB909B113 by NXP Semiconductors

BB909B113

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BA682 by North American Philips Discrete Products Div

BA682

North American Philips Discrete Products Div

Varactors;
MV104RL1 by Onsemi

MV104RL1

Onsemi

MV104RL1 by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 39.5 pF nominal capacitance. It operates at up to 125 °C and has a min breakdown voltage of 32V. Ideal for applications requiring variable capacitance diodes in cylindrical packages.
BB804G235 by NXP Semiconductors

BB804G235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB909A143 by NXP Semiconductors

BB909A143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4799 by Onsemi

1N4799

Onsemi

1N4799 by Onsemi is a varactor diode with 82pF nominal capacitance, abrupt variable capacitance classification, and 15V reverse voltage. It is used in RF applications for frequency tuning due to its high quality factor and low reverse current. Operating temperature ranges from -65 °C to 150°C.
MMVL105GT1G by Onsemi

MMVL105GT1G

Onsemi

MMVL105GT1G by Onsemi is a varactor diode with a nominal capacitance of 2.15 pF and a breakdown voltage of 30 V, suitable for RF tuning applications. It features a small outline package style, gull wing terminal form, and can handle a max power dissipation of 0.2 W in surface mount configurations.
MDX588D by Texas Instruments

MDX588D

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 30; Nominal Diode Capacitance: .225 pF;
BB133T/R by NXP Semiconductors

BB133T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5447 by Onsemi

1N5447

Onsemi

1N5447 by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 20 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.
SVC203C-TB-E by Onsemi

SVC203C-TB-E

Onsemi

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Diode Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH;
BB914E6327HTSA1 by Infineon Technologies

BB914E6327HTSA1

Infineon Technologies

Infineon's BB914E6327HTSA1 is a varactor diode with 43.75 pF capacitance, 18 V breakdown voltage, and 2 elements in common cathode configuration. Ideal for RF applications due to its variable capacitance feature and small outline package design for surface mount technology.
BB156/T3 by NXP Semiconductors

BB156/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX597D by Texas Instruments

MDX597D

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;
1SV228(TPH3,F) by Toshiba

1SV228(TPH3,F)

Toshiba

The Toshiba 1SV228(TPH3,F) Varactor Diode features a common cathode configuration with 2 elements, suitable for very high frequency applications. With a max operating temperature of 125°C, it offers a nominal capacitance of 30.5 pF and a min breakdown voltage of 15V, making it ideal for small outline surface mount designs.