Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | ISL73020SEHMX |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0015 ohm; Terminal Position: BOTTOM; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
| Datasheet | ISL73020SEHMX Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM NITRIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 29 pF |
| Maximum Drain Current (ID): | 65 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 30 |
| Minimum DS Breakdown Voltage: | 40 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-XBCC-N30 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | HIGH RELIABILITY |
| Maximum Operating Temperature: | 125 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .0015 ohm |
