Renesas Electronics - IT2009

  1. Home
  2. Renesas Electronics - IT2009
IT2009 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number IT2009
Description RF/Microwave Amplifiers; Technology: GAAS; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Supply Current: 750 mA; Power Supplies (V): 9;
Datasheet IT2009 Datasheet
NAME DESCRIPTION
No. of Functions: 1
Package Equivalence Code: DIE OR CHIP
Technology: GAAS
Maximum Operating Temperature: 85 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 750 mA
Minimum Operating Temperature: -40 Cel
Power Supplies (V): 9
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC441LH5TR by Hittite Microwave

HMC441LH5TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
MGA-62563-BLKG by Broadcom

MGA-62563-BLKG

Broadcom

Broadcom's MGA-62563-BLKG is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, matte tin terminals, and requires 3-5V power supply at 77 mA.
MGA-631P8-BLKG by Broadcom

MGA-631P8-BLKG

Broadcom

Broadcom's MGA-631P8-BLKG is a GAAS RF amplifier with 16dB gain, operating from 400MHz to 1500MHz. It has a max input power of 20dBm and uses a 4V power supply. Ideal for wideband low-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
ABA-52563-TR1G by Agilent Technologies

ABA-52563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 20 dBm;
HMC635LC4TR by Hittite Microwave

HMC635LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 70 Cel;
SKY65404-31 by Skyworks Solutions

SKY65404-31

Skyworks Solutions

SKY65404-31 by Skyworks Solutions is a wide band low power RF amplifier with 11 dB gain, operating from 4900 MHz to 5900 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
TQP3M9008 by Qorvo

TQP3M9008

Qorvo

TQP3M9008 by Qorvo is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Ideal for RF applications requiring high performance in plastic/epoxy package.
BGU8052X by NXP Semiconductors

BGU8052X

NXP Semiconductors

WIDE BAND LOW POWER;
BGA3018,115 by NXP Semiconductors

BGA3018,115

NXP Semiconductors

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
HMC549MS8G by Analog Devices

HMC549MS8G

Analog Devices

HMC549MS8G by Analog Devices is a wide band low power RF amplifier with 2 dB gain, operating from 40 MHz to 960 MHz. It has a max input power of 0 dBm and operates on a 5V power supply. This surface mount component is ideal for RF and microwave applications requiring amplification in the frequency range specified.
HMC564LC4 by Hittite Microwave

HMC564LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;
MMG3H21NT1 by Freescale Semiconductor

MMG3H21NT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TO-243; Maximum Supply Current: 110 mA;
HMC287MS8ETR by Analog Devices

HMC287MS8ETR

Analog Devices

Analog Devices' HMC287MS8ETR is a GaAs RF amplifier with 3V supply, 15mA max current, and -40 to 85°C operating range. Ideal for narrowband low-power applications, it features a surface-mount package suitable for RF and microwave circuits.
HMC1087 by Hittite Microwave

HMC1087

Hittite Microwave

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 4; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 34 dBm; Maximum Operating Frequency: 20000 MHz;
NBB-300-T1 by Rf Micro Devices

NBB-300-T1

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; JESD-609 Code: e3;
TGA2701-SM by Qorvo

TGA2701-SM

Qorvo

TGA2701-SM by Qorvo is a wide band high power RF amplifier with 18 dB gain. It operates from 5900 MHz to 8500 MHz, handling up to 29 dBm CW input power. Ideal for applications requiring high power amplification in RF and microwave systems.
HMC441LC3BTR by Hittite Microwave

HMC441LC3BTR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC12,.12SQ,20;
QPA9419 by Qorvo

QPA9419

Qorvo

RF/Microwave Amplifiers;
TGA2227-SM by Qorvo

TGA2227-SM

Qorvo

Qorvo's TGA2227-SM is a wide band medium power RF amplifier with 15.7 dB gain, operating from 2-22 GHz. It can handle up to 40 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC751LC4TR by Analog Devices

HMC751LC4TR

Analog Devices

HMC751LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 17-27 GHz, ideal for microwave applications. Featuring a ceramic package, it has a max input power of -5 dBm and requires 4V supply voltage.