Renesas Electronics - L14R1

  1. Home
  2. Renesas Electronics - L14R1
L14R1 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number L14R1
Description PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .15 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;
Datasheet L14R1 Datasheet
In Stock944
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Optoelectronic Type: PHOTO DARLINGTON
Peak Wavelength (nm): 875
Maximum Power Dissipation: .15 W
Maximum Response Time: .000045 s
Maximum Operating Temperature: 100 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -55 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
944 - -

Popular Products

Category Top Products

QSD124 by Onsemi

QSD124

Onsemi

The Onsemi QSD124 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR range detection in through hole mounting setups.
SDP8405-003 by Honeywell Sensing And Control

SDP8405-003

Honeywell Sensing And Control

SDP8405-003 by Honeywell Sensing And Control is a PHOTO TRANSISTOR with a max operating temperature of 100°C and a min operating temperature of -40°C. It has a max power dissipation of 0.07W and a max dark current of 100nA. This through-hole mount optoelectronic component is suitable for various applications requiring fast response time.
SFH3401-1 by Infineon Technologies

SFH3401-1

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 10 nA;
SFH309FA2 by Infineon Technologies

SFH309FA2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Peak Wavelength (nm): 900; Maximum On State Current: .015 A;
OP550C by Optek Technology

OP550C

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 930; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;
SFH317F2 by Infineon Technologies

SFH317F2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;
SDP8406-003 by Honeywell Sensing And Control

SDP8406-003

Honeywell Sensing And Control

SDP8406-003 by Honeywell is a single phototransistor with max temp of 85°C and min temp of -40°C. It has a nominal light current of 3.4mA, dark current of 100nA, and response time of 0.000015s. With a collector-emitter breakdown voltage of 30V, it is ideal for optoelectronic applications requiring precise light detection.
HST9-B380 by Broadcom

HST9-B380

Broadcom

PHOTO TRANSISTOR;
TPS613-AB by Toshiba

TPS613-AB

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .02 mA; Peak Wavelength (nm): 720; No. of Functions: 1; Shape: ROUND;
SD2440-002 by Micro Switch

SD2440-002

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W; Maximum Response Time: .000015 s;
TPS613-C by Toshiba

TPS613-C

Toshiba

PHOTO TRANSISTOR; Size: 3 mm; Nominal Light Current: .06 mA; Configuration: SINGLE; Maximum Operating Temperature: 75 Cel; Maximum Dark Current: 100 nA;
QSB363C by Onsemi

QSB363C

Onsemi

The Onsemi QSB363C is a 2mm phototransistor with peak wavelength of 940nm. It operates b/w -25 °C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications, it has a min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
TPS611 by Toshiba

TPS611

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;
QSB363 by Fairchild Semiconductor

QSB363

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Additional Features: DAY LIGHT FILTER; JESD-609 Code: e3;
SFH3410-3 by Infineon Technologies

SFH3410-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 570; Maximum On State Current: .02 A;
KDT00030TR by Onsemi

KDT00030TR

Onsemi

The Onsemi KDT00030TR is a phototransistor with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with max dark current of 100nA. Ideal for surface mount applications in optoelectronic circuits requiring photo detection at specific wavelengths.
1N5723 by Texas Instruments

1N5723

Texas Instruments

1N5723 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.
SMD2440-002 by Honeywell Sensing And Control

SMD2440-002

Honeywell Sensing And Control

SMD2440-002 by Honeywell Sensing And Control is a single configuration phototransistor with a peak wavelength of 880nm. It operates in temperatures ranging from -55 to 125 °C and has a max power dissipation of 0.125W. It is commonly used for optoelectronic applications requiring infrared range detection.
TIL65 by Texas Instruments

TIL65

Texas Instruments

TIL65 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It has max operating temp of 85°C and min of -40°C. With features like 0.05W power dissipation, it's ideal for applications requiring fast response time such as light sensing in industrial automation.
TIL412 by Texas Instruments

TIL412

Texas Instruments

TIL412 by Texas Instruments is a PHOTO DARLINGTON phototransistor with max operating temp of 85°C and min of -40°C. It has max dark current of 100nA, response time of 0.001s, and on state current of 0.0001A. Ideal for optoelectronic applications requiring precise light detection in various environments.