Renesas Electronics - MBB100AS6

  1. Home
  2. Renesas Electronics - MBB100AS6
MBB100AS6 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number MBB100AS6
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 100 A; Additional Features: HIGH SPEED, ULTRA SOFT FAST RECOVERY; No. of Elements: 6; Transistor Element Material: SILICON;
Datasheet MBB100AS6 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 400 ns
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
No. of Elements: 6
Additional Features: HIGH SPEED, ULTRA SOFT FAST RECOVERY
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRG4PC50FDPBF by International Rectifier

IRG4PC50FDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;
FP100R12KT4B11BOSA1 by Infineon Technologies

FP100R12KT4B11BOSA1

Infineon Technologies

Infineon's FP100R12KT4B11BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 620ns turn-off time, and 210ns turn-on time. Its complex configuration and isolated case connection make it ideal for high-power applications in industries like automotive and renewable energy.
APT75GP120JDQ3 by Microchip Technology

APT75GP120JDQ3

Microchip Technology

APT75GP120JDQ3 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. It is designed for motor control applications, featuring a nominal turn off time of 360ns and a max operating temperature of 150°C.
IXGH10N170A by IXYS Corporation

IXGH10N170A

IXYS Corporation

IXGH10N170A by IXYS Corp is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 10A. It is commonly used in motor control applications due to its fast nominal turn-off time of 240ns.
IHW30N160R2FKSA1 by Infineon Technologies

IHW30N160R2FKSA1

Infineon Technologies

IHW30N160R2FKSA1 by Infineon is an N-CHANNEL IGBT with 1600V VCE, 60A IC, and 675ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it has a FLANGE MOUNT style for COLLECTOR connection.
IRG4BC40KPBF by International Rectifier

IRG4BC40KPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 42 A; Package Shape: RECTANGULAR;
FZ400R12KE4HOSA1 by Infineon Technologies

FZ400R12KE4HOSA1

Infineon Technologies

FZ400R12KE4HOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 810ns turn off time and 370ns turn on time, it operates at up to 150°C temperature in a rectangular package style.
IRG4RC10SDPBF by International Rectifier

IRG4RC10SDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Collector Current (IC): 14 A; Case Connection: COLLECTOR;
SKM145GB066D by Semikron International

SKM145GB066D

Semikron International

Semikron International's SKM145GB066D is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle up to 195A of Collector Current. Ideal for POWER CONTROL applications, this IGBT operates at a max temperature of 175°C with a fast Turn Off Time of 536ns.
IRG4BC40KPBF by Infineon Technologies

IRG4BC40KPBF

Infineon Technologies

IRG4BC40KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 42A max collector current. It has a single configuration for MOTOR CONTROL applications, offering a max power dissipation of 160W. The transistor features a package style of FLANGE MOUNT and can operate at temperatures up to 150°C.
FF200R12KT4HOSA1 by Infineon Technologies

FF200R12KT4HOSA1

Infineon Technologies

Infineon Technologies' FF200R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, each with a BUILT-IN DIODE. It has a max voltage of 1200V, max current of 320A, and turn-off time of 700ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.
IXXX300N60B3 by Littelfuse

IXXX300N60B3

Littelfuse

The Littelfuse IXXX300N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 550A IC, and 2300W power dissipation. Ideal for power control applications, it has a turn-off time of 430ns and operates b/w -55°C to 175°C.
STGD10NC60HT4 by STMicroelectronics

STGD10NC60HT4

STMicroelectronics

STGD10NC60HT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 60W Ptot. Ideal for POWER CONTROL applications, it has a toff of 247ns and ton of 19ns. The GULL WING package style makes it suitable for surface mount designs in various electronic systems.
IRG4PF50WPBF by International Rectifier

IRG4PF50WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 51 A; JEDEC-95 Code: TO-247AC;
APT30GP60BDQ1G by Microsemi

APT30GP60BDQ1G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Elements: 1; Terminal Position: SINGLE;
IKW40N60H3FKSA1 by Infineon Technologies

IKW40N60H3FKSA1

Infineon Technologies

IKW40N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 249ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 175°C in a PLASTIC/EPOXY package style.
SKM100GB063D by Semikron International

SKM100GB063D

Semikron International

SKM100GB063D by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.5V, Max IC of 130A, and can handle up to 450W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 335ns and high collector-emitter voltage of 600V.
IXXH30N60B3D1 by IXYS Corporation

IXXH30N60B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
IRG7PH42U-EP by International Rectifier

IRG7PH42U-EP

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Terminal Finish: MATTE TIN OVER NICKEL;
IXYN100N120C3H1 by Littelfuse

IXYN100N120C3H1

Littelfuse

IXYN100N120C3H1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 134A max collector current, and 690W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 265ns.