Renesas Electronics - MBM150A6

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Nominal Turn On Time (ton): 75 ns;

FS75R12KE3B9BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 105A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.

IKD04N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 20ns turn on time. Ideal for power control applications due to its 75W max power dissipation and built-in diode configuration. Package style is small outline with gull wing terminals.

FF600R12ME4B72BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, making it ideal for POWER CONTROL applications. With a turn off time of 770ns and turn on time of 310ns, this rectangular package transistor operates at temperatures up to 175°C.

IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Collector Current (IC): 85 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel;

IRGP50B60PDPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 370W power dissipation, and 75A max collector current. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package shape. Operating at up to 150°C, it offers fast rise time of 36ns and fall time of 65ns.

Onsemi's FGD3040G2-F085C is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.25V, collector-emitter voltage of 450V, and can handle a max current of 41A. This surface-mount transistor has a package style of small outline and operates b/w -55 to 175 °C.

Infineon Technologies' FF450R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring 1200V max collector-emitter voltage and 580A max collector current. Ideal for high-power applications requiring fast switching speeds, such as industrial motor drives and renewable energy systems.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 35 A; Transistor Application: MOTOR CONTROL; Package Style (Meter): SMALL OUTLINE;

IRGP4640DPBF by Infineon is an N-CHANNEL IGBT with 600V VCEsat, 65A IC, and 250W power dissipation. Ideal for power control applications, it features a built-in diode, 31ns rise time, and -55 to 175°C operating temperature range.

NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.

Infineon's IRG4RC10UDTRLP is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 8.5A max collector current. It has a built-in diode, 345ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount configurations.

IXXH100N60B3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 220A IC, and 830W power dissipation. Ideal for POWER CONTROL applications, it features a single configuration in a rectangular package with through-hole terminals.

FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.

Mitsubishi Electric's CM300DY-12NF is a N-CHANNEL IGBT with 2 elements, 7 terminals, and max IC of 300A. Ideal for power control applications with VCEsat of 2.2V, max VCE of 600V, and Pmax of 780W. Operates at up to 150°C temp with gate-emitter voltage of 20V.

IKQ75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 454ns and turn-on time of 81ns, this transistor operates from -40°C temperature range.

SKM195GB066D by Semikron International is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle a Max Collector Current of 265A. Ideal for POWER CONTROL applications, it operates at up to 175°C and features a Nominal Turn Off Time of 569ns.

Semikron International's SKM400GB126D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it ensures efficient performance. With fast Nominal Turn Off Time (toff) of 760ns, this device operates in temperatures ranging from -40 to 150 °C, making it suitable for various industrial power systems.

FGD3040G2-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and Max Power Dissipation of 150W. It is designed for AUTOMOTIVE IGNITION applications, featuring a built-in diode and resistor in a surface-mount package style.