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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | MBM200GR12 |
| Description | Insulated Gate Bipolar Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): 1130 W; Maximum Collector Current (IC): 200 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 1200 V; |
| Datasheet | MBM200GR12 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 200 A |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 7 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 1130 W |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PUFM-X7 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 2.8 V |
