Renesas Electronics - MBN1200D33A

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MBN1200D33A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number MBN1200D33A
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 12000 W; Maximum Collector Current (IC): 1200 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 3300 V; No. of Elements: 1;
Datasheet MBN1200D33A Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 1200 A
Maximum Power Dissipation (Abs): 12000 W
Maximum Collector-Emitter Voltage: 3300 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 5 V
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