Renesas Electronics - MBN400GS12BW

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MBN400GS12BW by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number MBN400GS12BW
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2000 W; Maximum Collector Current (IC): 400 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum VCEsat: 3.4 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet MBN400GS12BW Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 400 A
Maximum Power Dissipation (Abs): 2000 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.4 V
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