Renesas Electronics - MC-424000A9AA-70

  1. Home
  2. Renesas Electronics - MC-424000A9AA-70
MC-424000A9AA-70 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number MC-424000A9AA-70
Description FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 30; Refresh Cycles: 1024; Maximum Operating Temperature: 70 Cel; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet MC-424000A9AA-70 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .009 Amp
Organization: 4MX9
Output Characteristics: 3-STATE
Maximum Seated Height: 26.289 mm
Sub-Category: DRAMs
Surface Mount: NO
Maximum Supply Current: 900 mA
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 30
No. of Words: 4194304 words
Terminal Position: SINGLE
Technology: CMOS
Maximum Operating Temperature: 70 Cel
Input/Output Type: COMMON
Memory Density: 37748736 bit
Memory IC Type: FAST PAGE DRAM MODULE
JESD-609 Code: e0
Minimum Operating Temperature: 0 Cel
Memory Width: 9
Qualification: Not Qualified
Package Equivalence Code: SIP30
Refresh Cycles: 1024
Maximum Access Time: 70 ns
No. of Words Code: 4M
Nominal Supply Voltage / Vsup (V): 5
Temperature Grade: COMMERCIAL
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MT41J128M16JT-125:KTR by Micron Technology

MT41J128M16JT-125:KTR

Micron Technology

Micron Technology's MT41J128M16JT-125:KTR is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 2Gb. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MT48LC8M16A2TG-75IT:G by Micron Technology

MT48LC8M16A2TG-75IT:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-75IT:G is a 3.3V, 8MX16 Synchronous DRAM with 133MHz clock frequency and -40 to 85°C operating range. Ideal for industrial applications, it features a small outline package, common I/O type, and self-refresh capability.
IS42S32160D-7BLI by Integrated Silicon Solution

IS42S32160D-7BLI

Integrated Silicon Solution

IS42S32160D-7BLI by Integrated Silicon Solution is a 16MX32 SYNCHRONOUS DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for INDUSTRIAL applications, it features FOUR BANK PAGE BURST access mode and offers a memory density of 536870912 bit.
MTA9ASF1G72HZ-3G2R1 by Micron Technology

MTA9ASF1G72HZ-3G2R1

Micron Technology

DDR4 DRAM MODULE;
IS42S16160G-7BLI by Integrated Silicon Solution

IS42S16160G-7BLI

Integrated Silicon Solution

IS42S16160G-7BLI by Integrated Silicon Solution is a 16MX16 SYNCHRONOUS DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals in a GRID ARRAY package style, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high-speed memory performance.
IS42S16320F-7TLI by Integrated Silicon Solution

IS42S16320F-7TLI

Integrated Silicon Solution

IS42S16320F-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast access times and high memory density.
IS42VM16200D-6BLI by Integrated Silicon Solution

IS42VM16200D-6BLI

Integrated Silicon Solution

IS42VM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. Operating at 1.8V, it offers dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times up to 5.5 ns.
W9751G6NB25I by Winbond Electronics

W9751G6NB25I

Winbond Electronics

Winbond Electronics' W9751G6NB25I is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like networking equipment and industrial automation systems.
MT61K512M32KPA-16:BTR by Micron Technology

MT61K512M32KPA-16:BTR

Micron Technology

Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
K4A8G085WB-BCPB by Samsung

K4A8G085WB-BCPB

Samsung

Samsung's K4A8G085WB-BCPB DDR4 DRAM features 1066 MHz clock frequency, 78 terminals, and 1.2V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage with a memory density of 8.59 Gb.
IS42S16320F-7TL by Integrated Silicon Solution

IS42S16320F-7TL

Integrated Silicon Solution

IS42S16320F-7TL by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals, and supports common I/O type. Ideal for applications requiring fast memory access in commercial temperature environments.
MT48LC8M16A2TG-7E:GTR by Micron Technology

MT48LC8M16A2TG-7E:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-7E:GTR is a 3.3V Synchronous DRAM with 8MX16 organization, offering 8388608 words and 134217728-bit memory density. Operating at a max temperature of 70°C, it features self-refresh mode and four-bank page burst access for commercial applications.
MT48LC32M16A2P-75IT by Micron Technology

MT48LC32M16A2P-75IT

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact small outline package design.
AS4C4M16SA-7TCNTR by Alliance Memory

AS4C4M16SA-7TCNTR

Alliance Memory

AS4C4M16SA-7TCNTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization and 16-bit memory width. Operating at temperatures from 0 to 70°C, it features self-refresh mode and offers a memory density of 67108864 bits. Ideal for applications requiring fast access times and high memory capacity in compact spaces.
IS43TR16512A-15HBLI by Integrated Silicon Solution

IS43TR16512A-15HBLI

Integrated Silicon Solution

IS43TR16512A-15HBLI by Integrated Silicon Solution is a 512MX16 DDR3 DRAM with 1.5V supply voltage, synchronous operation, and self-refresh capability. It features a low-profile grid array package suitable for applications requiring dual bank page burst access mode and 16-bit memory width. Ideal for high-performance computing devices needing reliable memory solutions.
MT46H128M32L2KQ-6WT:B by Micron Technology

MT46H128M32L2KQ-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2KQ-6WT:B is a DDR1 DRAM with 128MX32 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.
MT16JSF25664HY-1G4D1 by Micron Technology

MT16JSF25664HY-1G4D1

Micron Technology

Micron Technology's MT16JSF25664HY-1G4D1 is a 256MX64 DDR DRAM MODULE with 17179869184-bit memory density. Operating at 1.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package offers dual bank page burst access mode and CMOS technology.
IS43TR16256A-15HBLI by Integrated Silicon Solution

IS43TR16256A-15HBLI

Integrated Silicon Solution

IS43TR16256A-15HBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 4294967296 bit memory density. It operates synchronously at 1.5V, featuring self-refresh and industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.
MT41K1G8TRF-125:E by Micron Technology

MT41K1G8TRF-125:E

Micron Technology

MT41K1G8TRF-125:E by Micron Technology is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 243 mA of current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K64M16TW-107AIT:J by Micron Technology

MT41K64M16TW-107AIT:J

Micron Technology

Micron Technology's MT41K64M16TW-107AIT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a compact form factor.