Renesas Electronics - MC-5805

  1. Home
  2. Renesas Electronics - MC-5805
MC-5805 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number MC-5805
Description RF/Microwave Amplifiers; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 11; Technology: HYBRID; Power Supplies (V): 10; JESD-609 Code: e0;
Datasheet MC-5805 Datasheet
NAME DESCRIPTION
No. of Terminals: 11
Package Equivalence Code: SIP11,.1
Technology: HYBRID
Maximum Operating Temperature: 65 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 47 mA
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -30 Cel
Power Supplies (V): 10
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MW7IC2750NBR1 by NXP Semiconductors

MW7IC2750NBR1

NXP Semiconductors

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
HMC902LP3E by Hittite Microwave

HMC902LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
SMA3103-TL-E by Sanyo Semiconductor

SMA3103-TL-E

Sanyo Semiconductor

WIDE BAND LOW POWER;
CMPA1C1D080F by Wolfspeed

CMPA1C1D080F

Wolfspeed

NARROW BAND HIGH POWER;
ADL8106ACEZ-R7 by Analog Devices

ADL8106ACEZ-R7

Analog Devices

WIDE BAND LOW POWER;
MGA-86576-STR by Hewlett Packard

MGA-86576-STR

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
HMC561LP3E by Hittite Microwave

HMC561LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
BGA3018,115 by NXP Semiconductors

BGA3018,115

NXP Semiconductors

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
XP1035-QH-0G0T by M/a-com Technology Solutions

XP1035-QH-0G0T

M/a-com Technology Solutions

XP1035-QH-0G0T by M/a-com is a GAAS technology RF amplifier with 26 dB gain, operating from 5900 MHz to 9500 MHz. It has a max input power of 15 dBm and operates on a 6V power supply. Ideal for wide band medium power applications requiring surface mounting feature.
SGL0363Z by Qorvo

SGL0363Z

Qorvo

Qorvo's SGL0363Z is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2 GHz, handling up to 18 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
BGM1013 by Philips Semiconductors

BGM1013

Philips Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
MAX2659ELT/V+T by Analog Devices

MAX2659ELT/V+T

Analog Devices

MAX2659ELT/V+T by Analog Devices is a RF amplifier with 1.8/3.3V power supplies, BICMOS technology, and 5.6mA max supply current. It operates b/w -40 to 85°C, has AEC-Q100 screening level, and comes in a plastic/epoxy package. Ideal for RF & microwave applications requiring surface mounting feature.
MSA-1105-TR1 by Avantek

MSA-1105-TR1

Avantek

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.145CIR;
HMC902LP3E by Analog Devices

HMC902LP3E

Analog Devices

HMC902LP3E by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it suitable for various RF and microwave applications requiring high performance in a compact package.
HMC863ALC4TR-R5 by Analog Devices

HMC863ALC4TR-R5

Analog Devices

Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
XB1007-QT-0G00 by Mimix Broadband

XB1007-QT-0G00

Mimix Broadband

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 4000 MHz; Gain: 23 dB; Maximum Operating Frequency: 11000 MHz; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;
AG303-86G by Wj Communications

AG303-86G

Wj Communications

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;
CMPA601C025F by Wolfspeed

CMPA601C025F

Wolfspeed

WIDE BAND HIGH POWER;
HMC903LP3ETR by Analog Devices

HMC903LP3ETR

Analog Devices

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;