Renesas Electronics - MC-7831

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

HMC-AUH312 by Analog Devices is a GAAS technology RF amplifier with 10 dB gain, operating from 500 MHz to 80 GHz. It has a max input power of 10 dBm and requires an 8V power supply. Ideal for wide band low power applications, this component is designed for surface mounting with a characteristic impedance of 50 ohms.

Qorvo's RF5110GSR is a wideband medium power amplifier with 33dB gain, operating from 150MHz to 960MHz. It has a max input power of 13dBm and VSWR of 10, suitable for RF & microwave applications requiring high performance in a compact form factor. The hybrid construction and surface mount feature make it ideal for various communication systems.

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: MATTE TIN;

Qorvo's SGL0363Z is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2 GHz, handling up to 18 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC478MP86E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handles up to 5 dBm input power, and has a compact surface mount package ideal for RF applications in temperatures ranging from -40 to 85°C.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

NARROW BAND HIGH POWER;

HMC752LC4 by Analog Devices is a wide band low power RF amplifier with 23 dB gain. It operates b/w 24-28 GHz, handles -5 dBm input power, and has a characteristic impedance of 50 ohms. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

HMC608LC4 by Analog Devices is a wide band medium power RF amplifier with 27 dB gain. It operates b/w 9500-11500 MHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 5000 MHz;

HMC372LP3ETR by Analog Devices is a wide band low power RF amplifier with 1 function and 16 terminals. It operates at temperatures ranging from -40 to 85°C and requires a 5V power supply. This surface mount device is made of plastic/epoxy and is commonly used in RF and microwave applications.

Broadcom's MGA-81563-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package, operates at temperatures b/w -40°C to 85°C, and requires a 3V power supply.

ZHL-1-2W+ by Mini-circuits is a wide band medium power RF amplifier with a gain of 29 dB. It has a max input power of 10 dBm and can operate in temperatures ranging from -20 to 65 °C. This coaxial amplifier is suitable for applications requiring amplification in the frequency range of 5 MHz to 500 MHz.

HELA-10+ by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It has a max input power of 20 dBm and VSWR of 1.22, suitable for applications requiring high-frequency amplification in RF & microwave systems.

NXP Semiconductors' MW7IC2040NR1 is a MOS RF amplifier with 29.5 dB gain, operating from 1805-1990 MHz. It handles up to 25 dBm CW input power, with VSWR of 5 and characteristic impedance of 50 ohm. Ideal for narrowband high-power applications in RF and microwave systems.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 0 dB;

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.