Renesas Electronics - N0202R-T1-AT-ZL

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N0202R-T1-AT-ZL by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number N0202R-T1-AT-ZL
Description Small Signal Bipolar Transistors;
Datasheet N0202R-T1-AT-ZL Datasheet
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BC847C by ROHM

BC847C

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
PMBT2369,215 by NXP Semiconductors

PMBT2369,215

NXP Semiconductors

NXP Semiconductors' PMBT2369,215 is a NPN BJT transistor for switching applications. It has a VCEsat of 0.25V, hFE of 20, and IC of 0.2A. With a max operating temperature of 150°C, it offers fast turn-on/off times (10ns/20ns) and high transition frequency (500MHz).
MMBT3904LT3G by Onsemi

MMBT3904LT3G

Onsemi

MMBT3904LT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package with gull wing terminals makes it suitable for surface mount designs.
BC817-40LT1G by Onsemi

BC817-40LT1G

Onsemi

BC817-40LT1G by Onsemi is a NPN BJT with 45V VCEO, 0.5A IC, and 100MHz fT. Ideal for small signal applications in electronics due to its high hFE of 250 and compact SOT-23 package. Operating temperature range from -55°C to 150°C makes it suitable for various environments.
JANTX2N2222AUA by Vpt Components

JANTX2N2222AUA

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Package Body Material: PLASTIC/EPOXY;
2N2907A by Semicoa

2N2907A

Semicoa

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3904TAR by Fairchild Semiconductor

2N3904TAR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222ALT1G by Onsemi

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
2N2907A by Tt Electronics Plc

2N2907A

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-206AA;
2N2219A by Asi Semiconductor

2N2219A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2222AUB by Vpt Components

2N2222AUB

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 50 V;
BC817-16LT1G by Onsemi

BC817-16LT1G

Onsemi

BC817-16LT1G by Onsemi is a NPN BJT transistor with 3 terminals and a max power dissipation of 0.3W. It has a min DC current gain of 100, operates at temperatures up to 150°C, and can handle a max collector-emitter voltage of 45V. This small outline transistor is ideal for applications requiring high frequency transitions up to 100MHz in surface mount configurations.
2N2907A by Crimson Semiconductor

2N2907A

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3906 by Allegro MicroSystems

2N3906

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40QAZ by NXP Semiconductors

BC817-40QAZ

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
JANTX2N2222A by Vpt Components

JANTX2N2222A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Package Body Material: METAL;
BC847CLT1G by Onsemi

BC847CLT1G

Onsemi

BC847CLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 420, and fT of 100MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package.
MMBT2222A by Bytesonic Electronics

MMBT2222A

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
2N2219A by Motorola

2N2219A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel;
BC547B by Onsemi

BC547B

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;