Renesas Electronics - N450184C-T1

  1. Home
  2. Renesas Electronics - N450184C-T1
N450184C-T1 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number N450184C-T1
Description N-CHANNEL; Maximum Drain Current (ID): .08 A; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .08 A;
Datasheet N450184C-T1 Datasheet
NAME DESCRIPTION
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .08 A
Maximum Drain Current (Abs) (ID): .08 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .165 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BF998B-GS08 by Temic Semiconductors

BF998B-GS08

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Terminal Form: GULL WING;
934028860215 by NXP Semiconductors

934028860215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Terminal Finish: TIN;
BLF184XR by Ampleon Netherlands B V

BLF184XR

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
J308RL1 by Onsemi

J308RL1

Onsemi

J308RL1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
2N5484RLRE by Onsemi

2N5484RLRE

Onsemi

Onsemi's 2N5484RLRE is an N-CHANNEL RF FET with 16 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a PLASTIC/EPOXY package, DEPLETION MODE operation, and SILICON transistor element. With 0.03 A ID and 1 pF Crss, this THROUGH-HOLE transistor offers high performance in a CYLINDRICAL package.
ATF-54143-TR1G by Agilent Technologies

ATF-54143-TR1G

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Power Dissipation Ambient: .725 W; Moisture Sensitivity Level (MSL): 1;
FSX017LG by Fujitsu Semiconductor America

FSX017LG

Fujitsu Semiconductor America

RF Small Signal Field-Effect Transistors; Surface Mount: YES; No. of Terminals: 4; Package Body Material: UNSPECIFIED; Package Shape: ROUND; Package Style (Meter): DISK BUTTON;
934055961115 by NXP Semiconductors

934055961115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Maximum Feedback Capacitance (Crss): .03 pF; JESD-30 Code: R-PDSO-G4;
934050330215 by NXP Semiconductors

934050330215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
ATF-55143-BLKG by Broadcom

ATF-55143-BLKG

Broadcom

Broadcom's ATF-55143-BLKG is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C with a max power dissipation of 0.27W.
BF904WR by NXP Semiconductors

BF904WR

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: AMPLIFIER; Maximum Feedback Capacitance (Crss): .035 pF;
ATF-55143-TR1 by Agilent Technologies

ATF-55143-TR1

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e0; Minimum Power Gain (Gp): 15.5 dB; Highest Frequency Band: C BAND;
934021470215 by NXP Semiconductors

934021470215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: DEPLETION MODE; Transistor Application: SWITCHING;
933978500112 by NXP Semiconductors

933978500112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: RADIAL; Package Style (Meter): DISK BUTTON; Terminal Form: FLAT;
BF245BZL1 by Onsemi

BF245BZL1

Onsemi

BF245BZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.
ATF-36077-STR by Broadcom

ATF-36077-STR

Broadcom

Broadcom's ATF-36077-STR is an N-channel RF FET with 3V DS breakdown voltage and 11dB power gain, ideal for X-band applications. Featuring a ceramic-metal package, it operates in depletion mode with a max temp of 150°C. Suitable for amplifiers, this transistor has a flat terminal form and gold finish.
2N3823 by Crimson Semiconductor

2N3823

Crimson Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: JUNCTION; JESD-30 Code: O-MBCY-W4;
BF994SA-GS08 by Temic Semiconductors

BF994SA-GS08

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;
J309-AMMO by NXP Semiconductors

J309-AMMO

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; No. of Terminals: 3;
3SK167-5 by Onsemi

3SK167-5

Onsemi

3SK167-5 by Onsemi is an N-channel RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring high frequency signal amplification in environments up to 125 °C, such as RF communication systems and radar equipment.