Renesas Electronics - NDL7580PD

  1. Home
  2. Renesas Electronics - NDL7580PD
NDL7580PD by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NDL7580PD
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Spectral Bandwidth: 15 m; Peak Wavelength (nm): 1630; Maximum Forward Voltage: 4 V;
Datasheet NDL7580PD Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Peak Wavelength (nm): 1630
Spectral Bandwidth: 15 m
Maximum Operating Temperature: 65 Cel
Semiconductor Material: InGaAsP
Sub-Category: Laser Diodes
Maximum Forward Voltage: 4 V
Minimum Operating Temperature: -20 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TOLD320CCB by Toshiba

TOLD320CCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -30 Cel;
STH61008Z by Infineon Technologies

STH61008Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1300; Maximum Operating Temperature: 85 Cel; Maximum Forward Voltage: 1.5 V;
NDL3310 by Renesas Electronics

NDL3310

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .095 A; Peak Wavelength (nm): 650; Maximum Forward Voltage: 3 V; Maximum Operating Temperature: 40 Cel;
DL7032-001 by Onsemi

DL7032-001

Onsemi

DL7032-001 by Onsemi is a Laser Diode with 0.15A max forward current, 830nm peak wavelength, and -10 to 50 °C operating temp range. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
NX8563LF803-BA-A by Renesas Electronics

NX8563LF803-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1580;
NX8570SC437-BA-A by Renesas Electronics

NX8570SC437-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1543; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
SDL3034-211 by Onsemi

SDL3034-211

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel;
NX8560MC-BC by Renesas Electronics

NX8560MC-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1550; Maximum Forward Current: .15 A; Semiconductor Material: GaAs; Minimum Operating Temperature: 0 Cel;
TOLD124R by Toshiba

TOLD124R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
NX8571SC6070-BA-AZ by Renesas Electronics

NX8571SC6070-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
TOLD120 by Toshiba

TOLD120

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .1 A;
SDL8032-101 by Onsemi

SDL8032-101

Onsemi

SDL8032-101 by Onsemi is an 850nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
NX8560SJ389-CC by Renesas Electronics

NX8560SJ389-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs; Maximum Response Time: .00000000004 s;
TOLD181 by Toshiba

TOLD181

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .28 A; Minimum Operating Temperature: -10 Cel;
SDL5032 by Onsemi

SDL5032

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; JESD-609 Code: e0; Peak Wavelength (nm): 830;
TOLD322ACA by Toshiba

TOLD322ACA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Semiconductor Material: InGaAs; Maximum Response Time: .000000001 s; Maximum Forward Current: .15 A;
NX8567SA287-CC by Renesas Electronics

NX8567SA287-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1528; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
DL-3150-133 by Onsemi

DL-3150-133

Onsemi

DL-3150-133 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It operates at -10 to 70 °C, with max forward current of 0.045A and voltage of 2.3V. Ideal for applications requiring THROUGH HOLE MOUNT in optoelectronics.
SDL3140 by Onsemi

SDL3140

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 790;
TOLD134 by Toshiba

TOLD134

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830;