Renesas Electronics - NE13783

  1. Home
  2. Renesas Electronics - NE13783
NE13783 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE13783
Description N-CHANNEL; Maximum Drain Current (Abs) (ID): .1 A; Maximum Drain Current (ID): .1 A; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL SEMICONDUCTOR; JESD-609 Code: e0;
Datasheet NE13783 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): .1 A
Maximum Drain Current (Abs) (ID): .1 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .27 W
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BLS7G2731L-220P by NXP Semiconductors

BLS7G2731L-220P

NXP Semiconductors

N-CHANNEL; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF245ARL by Onsemi

BF245ARL

Onsemi

BF245ARL by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
MMBF5484LT1G by Onsemi

MMBF5484LT1G

Onsemi

MMBF5484LT1G by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and 3 terminals. With a max power dissipation of 0.225 W, this JUNCTION FET has a temp range of -55 to 150 °C.
2N5248 by Texas Instruments

2N5248

Texas Instruments

2N5248 by Texas Instruments is an N-CHANNEL FET with a PLASTIC/EPOXY body. Operating in DEPLETION MODE, it's ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.36W and feedback capacitance of 2pF, it offers high performance in a CYLINDRICAL package.
3SK168B by Onsemi

3SK168B

Onsemi

3SK168B by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.25W. Ideal for applications requiring METAL SEMICONDUCTOR technology, operating up to 125 °C.
2N4416 by Central Semiconductor

2N4416

Central Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Feedback Capacitance (Crss): 1 pF;
J310 by Inter F E T

J310

Inter F E T

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Operating Mode: DEPLETION MODE;
2N5951 by Onsemi

2N5951

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: JUNCTION;
2N4416A by Inter F E T

2N4416A

Inter F E T

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-72;
934055959215 by NXP Semiconductors

934055959215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
2SK197 by Hitachi

2SK197

Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: DEPLETION MODE; Maximum Drain Current (ID): .02 A;
MMBF5484LT1 by Motorola

MMBF5484LT1

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; No. of Terminals: 3;
BFW10 by Continental Device India

BFW10

Continental Device India

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; Maximum Feedback Capacitance (Crss): .8 pF; Operating Mode: DEPLETION MODE;
ATF-54143-BLKG by Broadcom

ATF-54143-BLKG

Broadcom

Broadcom ATF-54143-BLKG is a N-channel FET with 5V DS breakdown voltage, 15dB power gain, and operates in C band. Ideal for amplifier applications, it has a max drain current of 0.12A and can handle up to 0.725W power dissipation at 150°C.
FSX017LG by Fujitsu

FSX017LG

Fujitsu

FSX017LG by Fujitsu is an N-CHANNEL FET with a DEPLETION MODE operating mode, ideal for X BAND applications. Featuring a CERAMIC, METAL-SEALED COFIRED package and GALLIUM ARSENIDE element material, it offers 8V DS breakdown voltage and 0.22W power dissipation at 175°C max temperature. Suitable for amplifier circuits with its SOURCE case connection and flat terminal form.
934021490215 by NXP Semiconductors

934021490215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JEDEC-95 Code: TO-236AB; Transistor Application: SWITCHING;
BF256ARL by Onsemi

BF256ARL

Onsemi

BF256ARL by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high frequency amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.
JANTX2N3822 by Microsemi

JANTX2N3822

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 50 V; Package Style (Meter): CYLINDRICAL; Reference Standard: MIL-19500;
2N5486 by Fairchild Semiconductor

2N5486

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM;
BF1208,115 by NXP Semiconductors

BF1208,115

NXP Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;