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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE20200 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Shape: RECTANGULAR; Highest Frequency Band: KA BAND; |
| Datasheet | NE20200 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 11 dB |
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | HETERO-JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .06 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 4 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | KA BAND |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | .06 A |
| Maximum Power Dissipation Ambient: | .2 W |
