Image shown is a representation only.
| Manufacturer | Fujitsu Semiconductor America |
|---|---|
| Manufacturer's Part Number | FHX35X |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XUUC-N4; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Maximum Operating Temperature: 175 Cel; |
| Datasheet | FHX35X Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 4 V |
| Qualification: | Not Qualified |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | K BAND |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Power Dissipation Ambient: | .29 W |
