Renesas Electronics - NE33284A

  1. Home
  2. Renesas Electronics - NE33284A
NE33284A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE33284A
Description N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .08 A; Maximum Drain Current (Abs) (ID): .08 A;
Datasheet NE33284A Datasheet
NAME DESCRIPTION
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .08 A
Maximum Drain Current (Abs) (ID): .08 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .165 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BF904R by NXP Semiconductors

BF904R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): .03 A; No. of Terminals: 4;
BF244BRL by Onsemi

BF244BRL

Onsemi

BF244BRL by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It features SINGLE configuration, 0.1A ID, and DEPLETION MODE operation in a CYLINDRICAL package with TIN LEAD finish.
BF245B,126 by NXP Semiconductors

BF245B,126

NXP Semiconductors

BF245B,126 by NXP Semiconductors is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY. With 0.3W power dissipation and 0.025A Drain Current, it has a max operating temperature of 150°C.
933106600112 by NXP Semiconductors

933106600112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 30 V; Operating Mode: DEPLETION MODE;
2N5484ZL1 by Onsemi

2N5484ZL1

Onsemi

2N5484ZL1 by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max ID of 0.03 A and Crss of 1 pF. This JUNCTION FET operates in the ULTRA HIGH FREQUENCY BAND with a CYLINDRICAL package shape.
MMBFJ310LT3 by Onsemi

MMBFJ310LT3

Onsemi

MMBFJ310LT3 by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, operating in DEPLETION MODE. It is ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND due to its small outline package and 2.5pF feedback capacitance.
ATF-58143-TR2G by Broadcom

ATF-58143-TR2G

Broadcom

Broadcom ATF-58143-TR2G is an N-channel FET for RF applications. Features include 15 dB power gain, 5 V breakdown voltage, and C band frequency range. Ideal for amplifier circuits in small outline packages with high electron mobility technology.
FLL177ME by Eudyna Devices

FLL177ME

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1;
934031450115 by NXP Semiconductors

934031450115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
JANTXV2N3823 by New England Semiconductor

JANTXV2N3823

New England Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Qualification: Not Qualified; Package Shape: ROUND;
CLF1G0035-100PU by NXP Semiconductors

CLF1G0035-100PU

NXP Semiconductors

NXP Semiconductors' CLF1G0035-100PU is an N-CHANNEL RF FET with 150V DS breakdown voltage. It features a common source configuration, suitable for S BAND applications like amplifiers. The transistor utilizes high electron mobility GaN technology in a ceramic-metal package with flange mount style.
BF410D by NXP Semiconductors

BF410D

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
2N4416 by Asi Semiconductor

2N4416

Asi Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Finish: TIN LEAD; Transistor Element Material: SILICON;
BF511-T by NXP Semiconductors

BF511-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
ATF-36077TR1 by Hewlett Packard

ATF-36077TR1

Hewlett Packard

Hewlett Packard's ATF-36077TR1 is an N-channel RF FET with a min DS breakdown voltage of 3V and power gain of 11dB. Ideal for amplifier applications in KU band, it operates in depletion mode with high electron mobility technology. The transistor features a ceramic-metal-sealed co-fired package body and flat terminal form for surface mount installation.
BF904WR,115 by NXP Semiconductors

BF904WR,115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Maximum Feedback Capacitance (Crss): .035 pF; Terminal Finish: TIN;
BF244A by Onsemi

BF244A

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Operating Mode: DEPLETION MODE; Maximum Power Dissipation Ambient: .35 W;
J310 by Temic Semiconductors

J310

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;
BF998TRL13 by NXP Semiconductors

BF998TRL13

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
BF960 by NXP Semiconductors

BF960

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Terminal Form: FLAT;