Renesas Electronics - NE350184C

  1. Home
  2. Renesas Electronics - NE350184C
NE350184C by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE350184C
Description N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;
Datasheet NE350184C Datasheet
NAME DESCRIPTION
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .07 A
Maximum Drain Current (Abs) (ID): .07 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .165 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

934054130115 by NXP Semiconductors

934054130115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;
JAN2N3822 by Microsemi

JAN2N3822

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Position: BOTTOM; Transistor Element Material: SILICON;
NE3210S01-T1B by California Eastern Laboratories

NE3210S01-T1B

California Eastern Laboratories

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; JESD-30 Code: O-PRDB-G4; Package Body Material: PLASTIC/EPOXY;
BF256B/1 by NXP Semiconductors

BF256B/1

NXP Semiconductors

BF256B/1 by NXP Semiconductors is an N-channel RF FET designed for ultra-high frequency applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and has a max temp of 150 °C. Ideal for RF amplification in communication systems.
BF904,215 by NXP Semiconductors

BF904,215

NXP Semiconductors

NXP Semiconductors' BF904,215 is an N-CHANNEL RF FET with a 7V DS breakdown voltage. It operates in the UHF band, has a max drain current of 0.03A, and features a built-in diode for amplifier applications. The transistor is surface mountable, with GULL WING terminals and a max operating temperature of 150°C.
BF556BT/R by NXP Semiconductors

BF556BT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
BF245A/0 by NXP Semiconductors

BF245A/0

NXP Semiconductors

BF245A/0 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 30V, operates in depletion mode, and supports very high frequencies. With a cylindrical package and 3 terminals, it ensures reliable performance up to 150 °C.
2SK302-Y by Toshiba

2SK302-Y

Toshiba

Toshiba's 2SK302-Y is an N-CHANNEL RF FET with a built-in diode, ideal for amplifier applications. Operating in depletion mode, it offers a max drain current of 0.03A and very high frequency band performance. With a package style of small outline and GULL WING terminals, it can handle up to 125°C operating temperature.
BF909T/R by NXP Semiconductors

BF909T/R

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY;
BF901TRL by NXP Semiconductors

BF901TRL

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Terminal Form: GULL WING; Terminal Position: DUAL;
BF1204 by NXP Semiconductors

BF1204

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 2; Maximum Drain Current (ID): .03 A;
2N5397 by Texas Instruments

2N5397

Texas Instruments

2N5397 by Texas Instruments is an N-CHANNEL FET with 25V DS Breakdown Voltage, 15dB Power Gain, and operates in DEPLETION MODE. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its SILICON element material and 1.2pF Max Feedback Capacitance.
BF998RT/R by NXP Semiconductors

BF998RT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;
2N5951 by Onsemi

2N5951

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: JUNCTION;
BF966 by NXP Semiconductors

BF966

NXP Semiconductors

BF966 by NXP Semiconductors is an N-channel RF FET designed for ultra-high frequency applications. It features a 20V min breakdown voltage, dual gate operation, and comes in a ceramic, metal-sealed package. Ideal for RF amplification in compact devices.
J308RLRA by Onsemi

J308RLRA

Onsemi

J308RLRA by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a Crss of 2.5 pF and operates in DEPLETION MODE with a TIN LEAD finish.
FLC107WG by Eudyna Devices

FLC107WG

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Highest Frequency Band: C BAND; Additional Features: HIGH RELIABILITY;
BF998 by Philips Components

BF998

Philips Components

N-CHANNEL; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .025 pF;
BF556A-T by NXP Semiconductors

BF556A-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
BF545A,215 by NXP Semiconductors

BF545A,215

NXP Semiconductors

NXP Semiconductors BF545A,215 is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND. Features include SINGLE configuration, DEPLETION MODE operation, and 150°C max temp.