Renesas Electronics - NE3509M04-T2

NE3509M04-T2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE3509M04-T2
Description N-CHANNEL; Surface Mount: YES; No. of Elements: 1; Maximum Drain Current (ID): .06 A; Field Effect Transistor Technology: HETERO-JUNCTION; Transistor Element Material: SILICON;
Datasheet NE3509M04-T2 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Transistor Element Material: SILICON
Field Effect Transistor Technology: HETERO-JUNCTION
Maximum Drain Current (ID): .06 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 4
Minimum DS Breakdown Voltage: 4 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: S BAND
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