Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE3511S02-T1D |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: KU BAND; Minimum Power Gain (Gp): 12.5 dB; Terminal Form: FLAT; |
| Datasheet | NE3511S02-T1D Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 12.5 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | HETERO-JUNCTION |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 4 V |
| Qualification: | Not Qualified |
| Terminal Position: | UNSPECIFIED |
| Package Style (Meter): | MICROWAVE |
| JESD-30 Code: | R-PXMW-F4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Additional Features: | LOW NOISE |
| Highest Frequency Band: | KU BAND |
