NE3513M04-T2-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE3513M04-T2-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .06 A; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 4 V;
Datasheet	NE3513M04-T2-A Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	11.5 dB
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.015 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	4 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	125 Cel
Maximum Drain Current (Abs) (ID):	.06 A
Maximum Power Dissipation Ambient:	.125 W

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