NE3516S02-T1C-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE3516S02-T1C-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: QUAD; Maximum Drain Current (Abs) (ID): .06 A;
Datasheet	NE3516S02-T1C-A Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	13 dB
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.06 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	4 V
Terminal Position:	QUAD
Package Style (Meter):	MICROWAVE
JESD-30 Code:	S-PQMW-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	125 Cel
Maximum Drain Current (Abs) (ID):	.06 A
Maximum Power Dissipation Ambient:	.165 W

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