Renesas Electronics - NE5511279A-A

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NE5511279A-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE5511279A-A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 3 A; Package Body Material: UNSPECIFIED;
Datasheet NE5511279A-A Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 3 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 4
Minimum DS Breakdown Voltage: 8 V
Qualification: Not Qualified
Terminal Position: QUAD
Package Style (Meter): MICROWAVE
JESD-30 Code: R-XQMW-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Case Connection: SOURCE
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