NE552R479A-T1 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE552R479A-T1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel;
Datasheet	NE552R479A-T1 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.3 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	4
Maximum Power Dissipation (Abs):	10 W
Terminal Position:	QUAD
Package Style (Meter):	MICROWAVE
JESD-30 Code:	R-XQMW-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	125 Cel
Case Connection:	SOURCE
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	15 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.3 A

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