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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE552R479A |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 15 V; No. of Terminals: 4; Transistor Application: AMPLIFIER; |
| Datasheet | NE552R479A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .5 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 15 V |
| Qualification: | Not Qualified |
| Terminal Position: | QUAD |
| Package Style (Meter): | MICROWAVE |
| JESD-30 Code: | R-CQMW-F4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | S BAND |
| Case Connection: | SOURCE |








