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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE5531079A-A |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | NE5531079A-A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 3 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 35 W |
| Terminal Position: | QUAD |
| Package Style (Meter): | MICROWAVE |
| JESD-30 Code: | R-XQMW-F4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 125 Cel |
| Case Connection: | SOURCE |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 25 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 3 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
