Renesas Electronics - NE6510179A-T1

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NE6510179A-T1 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE6510179A-T1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 2.8 A; Transistor Element Material: GALLIUM ARSENIDE; JESD-609 Code: e0;
Datasheet NE6510179A-T1 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: HETERO-JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 2.8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 4
Minimum DS Breakdown Voltage: 5.5 V
Qualification: Not Qualified
Terminal Position: QUAD
Package Style (Meter): MICROWAVE
JESD-30 Code: R-CQMW-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: L BAND
Case Connection: SOURCE
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