Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE6510379A-T1 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XQMW-F4; Maximum Power Dissipation Ambient: 18 W; Maximum Drain Current (Abs) (ID): 4.2 A; |
| Datasheet | NE6510379A-T1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | HETERO-JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 4.2 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 4 |
| Terminal Position: | QUAD |
| Package Style (Meter): | MICROWAVE |
| JESD-30 Code: | R-XQMW-F4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Maximum Power Dissipation Ambient: | 18 W |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 4.2 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 4.2 A |
