NE722S01-T1B-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE722S01-T1B-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Terminal Form: GULL WING; Highest Frequency Band: X BAND;
Datasheet	NE722S01-T1B-A Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	METAL SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.04 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
JESD-609 Code:	e6
No. of Terminals:	4
Minimum DS Breakdown Voltage:	4 V
Qualification:	Not Qualified
Terminal Position:	UNSPECIFIED
Package Style (Meter):	MICROWAVE
JESD-30 Code:	X-PXMW-G4
No. of Elements:	1
Package Shape:	UNSPECIFIED
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Additional Features:	LOW NOISE
Highest Frequency Band:	X BAND

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