NE76000 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE76000
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Minimum DS Breakdown Voltage: 5 V; Transistor Application: AMPLIFIER;
Datasheet	NE76000 Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	8 dB
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	METAL SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.05 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	5 V
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	R-XUUC-N6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (Abs) (ID):	.05 A
Maximum Power Dissipation Ambient:	.5 W

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