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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE76038-T1A |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .1 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: GALLIUM ARSENIDE; |
| Datasheet | NE76038-T1A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 12 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .05 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 5 V |
| Terminal Position: | QUAD |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PQSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | GULL WING |
| Operating Mode: | DEPLETION MODE |
| Additional Features: | LOW NOISE |
| Highest Frequency Band: | KU BAND |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | .05 A |
| Maximum Power Dissipation Ambient: | .1 W |
