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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE76083A |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Maximum Power Dissipation Ambient: .24 W; Minimum DS Breakdown Voltage: 5 V; |
| Datasheet | NE76083A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .1 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 4 |
| Terminal Position: | RADIAL |
| Package Style (Meter): | DISK BUTTON |
| JESD-30 Code: | O-CRDB-F4 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | KU BAND |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Power Dissipation Ambient: | .24 W |
| Minimum Power Gain (Gp): | 8 dB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 5 V |
| Maximum Drain Current (Abs) (ID): | .05 A |
