Renesas Electronics - NEM0899F06-30

  1. Home
  2. Renesas Electronics - NEM0899F06-30
NEM0899F06-30 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NEM0899F06-30
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 200 Cel;
Datasheet NEM0899F06-30 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 290 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 15 A
Maximum Drain Current (Abs) (ID): 15 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRLML6402TRPBF by International Rectifier

IRLML6402TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
IRF740PBF by Vishay Intertechnology

IRF740PBF

Vishay Intertechnology

Vishay Intertechnology's IRF740PBF is a N-CHANNEL Power FET with 400V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 520mJ EAS rating, and 0.55 ohm RDS(on).
AUIRFZ44N by International Rectifier

AUIRFZ44N

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
IRF9530PBF by Vishay Intertechnology

IRF9530PBF

Vishay Intertechnology

Vishay Intertechnology's IRF9530PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 48A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.3 ohm RDS(on), and 88W max power dissipation.
IRF3205PBF by International Rectifier

IRF3205PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;
FDS4559_F085 by Fairchild Semiconductor

FDS4559_F085

Fairchild Semiconductor

FDS4559_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 20A IDM and 0.055 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
FDS8984 by Fairchild Semiconductor

FDS8984

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Avalanche Energy Rating (EAS): 32 mJ; Package Shape: RECTANGULAR;
SIA456DJ-T1-GE3 by Vishay Intertechnology

SIA456DJ-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIA456DJ-T1-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it operates in enhancement mode with 55ns turn on time and 75ns turn off time. Suitable for surface mount, this transistor has a max power dissipation of 19W in a small outline package.
IRF7103TRPBF by International Rectifier

IRF7103TRPBF

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
AUIRF540Z by International Rectifier

AUIRF540Z

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Additional Features: AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY; JESD-609 Code: e3;
IRF540NSTRLPBF by International Rectifier

IRF540NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Avalanche Energy Rating (EAS): 185 mJ; JESD-609 Code: e3;
NVMFS5C604NLAFT1G by Onsemi

NVMFS5C604NLAFT1G

Onsemi

NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRF4905PBF by International Rectifier

IRF4905PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;
IRF3205STRLPBF by Infineon Technologies

IRF3205STRLPBF

Infineon Technologies

Infineon's IRF3205STRLPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With ENHANCEMENT MODE operation and DRAIN connection, it offers high power dissipation of 200W in a SMALL OUTLINE package.
IRFR6215TRPBF by Infineon Technologies

IRFR6215TRPBF

Infineon Technologies

Infineon's IRFR6215TRPBF is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W. Suitable for surface mount with GULL WING terminals, it has an operating temp range of -55 to 175 °C.
FDMS86300DC by Fairchild Semiconductor

FDMS86300DC

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
FDD4243-F085P by Onsemi

FDD4243-F085P

Onsemi

FDD4243-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 14A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
2N7002DW by Diodes Incorporated

2N7002DW

Diodes Incorporated

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Tin/Lead (Sn/Pb); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
IRLML0100TRPBF-1 by International Rectifier

IRLML0100TRPBF-1

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; JEDEC-95 Code: TO-236AB; Terminal Form: GULL WING;
IRFZ44NPBF by International Rectifier

IRFZ44NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;