Renesas Electronics - NEM0899F06-30

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NEM0899F06-30 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NEM0899F06-30
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 200 Cel;
Datasheet NEM0899F06-30 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 290 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 15 A
Maximum Drain Current (Abs) (ID): 15 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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