Renesas Electronics - NEM091203P-28-A

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NEM091203P-28-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NEM091203P-28-A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 292 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDFM-F8;
Datasheet NEM091203P-28-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 12 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 8
Maximum Power Dissipation (Abs): 292 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 12 A
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