NES1823M-45 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NES1823M-45
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Minimum DS Breakdown Voltage: 19 V; Additional Features: HIGH RELIABILITY;
Datasheet	NES1823M-45 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	JUNCTION
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PDFM-F4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	165 W
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	19 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY

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