Renesas Electronics - NES1823M-45

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NES1823M-45 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NES1823M-45
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Minimum DS Breakdown Voltage: 19 V; Additional Features: HIGH RELIABILITY;
Datasheet NES1823M-45 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 165 W
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 19 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
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