Renesas Electronics - NESG2021M05-T1

  1. Home
  2. Renesas Electronics - NESG2021M05-T1
NESG2021M05-T1 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NESG2021M05-T1
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .175 W; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON GERMANIUM; No. of Elements: 1;
Datasheet NESG2021M05-T1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .035 A
Maximum Power Dissipation (Abs): .175 W
Transistor Element Material: SILICON GERMANIUM
No. of Elements: 1
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 130
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BFR193WH6327XTSA1 by Infineon Technologies

BFR193WH6327XTSA1

Infineon Technologies

BFR193WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 12V VCE, 8000MHz fT, and 0.08A IC. Ideal for L Band applications like amplifiers due to its high transition frequency and low collector-base capacitance. Features Gull Wing terminals in a small outline package for surface mount assembly.
PN3563 by Onsemi

PN3563

Onsemi

PN3563 by Onsemi is a NPN BJT for RF applications. Features include Gp of 14 dB, hFE of 20, and fT of 600 MHz. Ideal for amplifier circuits in the VHF band with a max operating temp of 150 °C.
BFR92A by Lite-on Semiconductor

BFR92A

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: AMPLIFIER;
HFA3101BZ96 by Intersil

HFA3101BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Terminal Finish: Matte Tin (Sn) - annealed;
LM3146M by Rochester Electronics

LM3146M

Rochester Electronics

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: PLASTIC/EPOXY;
MMBT5179 by Fairchild Semiconductor

MMBT5179

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
BF224RL by Onsemi

BF224RL

Onsemi

BF224RL by Onsemi is a NPN RF BJT with 30V VCEO, 850MHz fT, and 0.05A IC. Ideal for very high frequency applications in electronics due to its single configuration and through-hole terminal form. Operating at up to 150 °C, it is commonly used in RF amplifiers and oscillators.
SS9018FBU by Onsemi

SS9018FBU

Onsemi

SS9018FBU by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 15V and fT of 1100MHz. Ideal for amplifier applications, it has a max power dissipation of 0.4W and operates at temperatures up to 150°C in the very high-frequency band.
934067699215 by NXP Semiconductors

934067699215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;
MMBTH10LT3G by Onsemi

MMBTH10LT3G

Onsemi

MMBTH10LT3G by Onsemi is an NPN RF BJT with a max fT of 650 MHz, hFE of 60, and VCEO of 25V. Ideal for UHF applications due to its small outline package and high transition frequency. Suitable for surface mount designs requiring ultra-high frequency band performance.
MRF559 by Motorola

MRF559

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Collector Current (IC): .15 A; Transistor Element Material: SILICON;
BFP640FH6327XTSA1 by Infineon Technologies

BFP640FH6327XTSA1

Infineon Technologies

BFP640FH6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for C Band applications. It has a max fT of 40 GHz, 0.05 A IC, and 4 V VCE. This transistor is designed for high-frequency amplifier circuits in automotive electronics.
BFT92E6327 by Infineon Technologies

BFT92E6327

Infineon Technologies

BFT92E6327 by Infineon Technologies is a PNP RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 15 and a nominal transition frequency of 5000 MHz, making it suitable for amplifier applications in the L Band. This surface-mount transistor features a small outline package with gull wing terminals and can handle up to 0.025 A collector current.
BFS17,215 by NXP Semiconductors

BFS17,215

NXP Semiconductors

The NXP Semiconductors BFS17,215 is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 1600 MHz and can handle a collector-emitter voltage of 15V. This transistor is commonly used in amplifier applications due to its ultra-high frequency band capabilities.
BFP520H6327XTSA1 by Infineon Technologies

BFP520H6327XTSA1

Infineon Technologies

BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.
BFP740E6327 by Infineon Technologies

BFP740E6327

Infineon Technologies

BFP740E6327 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for amplifier applications in C band frequencies. It features Gull Wing terminals, 160 min hFE, and can operate b/w -55 to 150 °C with a max collector-emitter voltage of 4 V.
MMBTH69LT3 by Onsemi

MMBTH69LT3

Onsemi

MMBTH69LT3 by Onsemi is a PNP RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 15V and fT of 2000 MHz. Ideal for amplifier applications in the ultra-high frequency band, this transistor comes in a small outline package with gull wing terminals.
NTE311 by Nte Electronics

NTE311

Nte Electronics

NTE311 by Nte Electronics is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 5W, fT of 800MHz, and hFE of 25, making it suitable for high-frequency signal amplification. The package style is cylindrical with a metal body and wire terminals.
MPSH10 by Micro Electronics

MPSH10

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
MCH4013-TL-E by Onsemi

MCH4013-TL-E

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi);