Renesas Electronics - NESG2021M16-T3-A-YFB

  1. Home
  2. Renesas Electronics - NESG2021M16-T3-A-YFB
NESG2021M16-T3-A-YFB by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NESG2021M16-T3-A-YFB
Description RF Small Signal Bipolar Transistors;
Datasheet NESG2021M16-T3-A-YFB Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

934064609115 by NXP Semiconductors

934064609115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .03 A; Highest Frequency Band: KU BAND;
MPS6507 by Onsemi

MPS6507

Onsemi

MPS6507 by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. It has a min hFE of 25 and fT of 800 MHz, making it ideal for amplifier applications. The package style is cylindrical with through-hole terminals and a max power dissipation of 0.625W.
934064616115 by NXP Semiconductors

934064616115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
MCH4017-TL-H by Onsemi

MCH4017-TL-H

Onsemi

MCH4017-TL-H by Onsemi is an NPN RF BJT with 4 terminals, operating at 150°C max. It has a transition frequency of 10GHz, 0.1A collector current, and 12V collector-emitter voltage. Ideal for ultra-high frequency applications due to its small outline package and high power dissipation of 0.45W.
BFU550XVL by NXP Semiconductors

BFU550XVL

NXP Semiconductors

The NXP Semiconductors BFU550XVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies up to 11GHz. It features a max collector-emitter voltage of 12V, collector current of 0.05A, and a transition frequency of 11GHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BFR520,215 by NXP Semiconductors

BFR520,215

NXP Semiconductors

NXP Semiconductors' BFR520,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle a max collector current of 0.07A at an operating temp of 175°C.
BF824,215 by Nexperia

BF824,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; JESD-609 Code: e3;
2N3866 by Asi Semiconductor

2N3866

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
MSC80195 by STMicroelectronics

MSC80195

STMicroelectronics

STMicroelectronics' MSC80195 is an NPN BJT transistor with a max fT of 3200 MHz. It has a max IC of 0.3A and Pdiss of 4.9W, suitable for L Band amplifier applications due to its high transition frequency and power dissipation capabilities.
MPSH17 by Onsemi

MPSH17

Onsemi

The Onsemi MPSH17 is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pdiss of 0.625W, ideal for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.
NSF2250WT1 by Onsemi

NSF2250WT1

Onsemi

NSF2250WT1 by Onsemi is a NPN BJT transistor with 3 terminals, operating at max 150 °C. It has a transition frequency of 2300 MHz and can handle up to 0.05 A collector current. Ideal for ultra high frequency amplifier applications in small outline packages.
BFY90 by Motorola

BFY90

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .05 A; JEDEC-95 Code: TO-72;
NESG260234-T1 by Nec Compound Semiconductor Devices

NESG260234-T1

Nec Compound Semiconductor Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSSO-F3;
TIS86 by Texas Instruments

TIS86

Texas Instruments

TIS86 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.4W, DC current gain of 40, and operates at temperatures up to 150°C. The package style is cylindrical with a round shape and wire terminals.
BFT92,215 by NXP Semiconductors

BFT92,215

NXP Semiconductors

NXP Semiconductors' BFT92,215 is a PNP RF BJT with 3 terminals. It operates in the ultra-high frequency band up to 5 GHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, this transistor can handle a max collector-emitter voltage of 15V at an operating temp of 150°C.
934067707215 by NXP Semiconductors

934067707215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
SS9018I by Onsemi

SS9018I

Onsemi

SS9018I by Onsemi is an NPN BJT transistor for RF applications. With a max VCEsat of 0.5V, it operates in L Band with fT at 1100MHz. Ideal for amplifiers, it has hFE of 132 and can handle IC up to 0.05A at 150 °C max temp.
2SC4104 by Onsemi

2SC4104

Onsemi

The Onsemi 2SC4104 is an NPN RF BJT transistor with a max VCEsat of 0.5V and hFE of 60, ideal for switching applications. It has a max IC of 0.05A, fT of 700MHz, and operates up to 150 °C. This small outline transistor in plastic/epoxy package with gull wing terminals is suitable for surface mount designs.
TIS105 by Texas Instruments

TIS105

Texas Instruments

TIS105 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.4W, hFE of 30, and can handle a max collector-emitter voltage of 45V. The package is cylindrical with wire terminals and made of plastic/epoxy material.
934066851115 by NXP Semiconductors

934066851115

NXP Semiconductors

RF Small Signal Bipolar Transistors;